2SB676 transistor equivalent, pnp transistor.
*Switching applications.
*Hammer drive, pulse motor drive applications.
*Power amplifier applications.
ABSO.
*High DC Current Gain-
: hFE = 2000(Min)@ IC= -1A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
*Complement to Type 2SD686
*Minimum Lot-to-.
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