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2SB645 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) High Power Dissipation- : PC= 150W(Max)@TC=25℃ Complement to Type 2SD665 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

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isc Silicon PNP Power Transistors 2SB645 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD665 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 200W high-fidelity audio frequency amplifier output stage.
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