2SB632 transistor equivalent, pnp transistor.
*Low-frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*High Collector Current-IC=-2.0A
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-25V(Min)
*Good Linearity of hFE
*Complement to Type 2SD612
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
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