2SB608 transistor equivalent, pnp transistor.
*Designed for power amplifier applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
.
*Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -180V(Min.)
*Low Collector Saturation Voltage-
: VCE(sat)= -1.0(Max.) @IC= -0.5A
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operati.
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