2SB563 transistor equivalent, pnp transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -3A
*Complement to Type 2SD297
*Minimum Lot-to-Lot variations for robust device
performance and reliabl.
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