2SB507 transistor equivalent, pnp transistor.
*Designed for the output stage of 15W to 25W AF power
amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -2.0A
*Complement to Type 2SD313
*Minimum Lot-to-Lot variations for robust device
performance and relia.
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