2SB1495 transistor equivalent, pnp transistor.
*Designed for high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V.
*High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -2A)
*Low-Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max.)@IC= -1.5A
*Complement to Type 2SD2257
*Minimum Lot-to-Lot variations for robust device
performance and reliable op.
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