2SB1430 transistor equivalent, pnp transistor.
*Designed for low-frequency power amplifiers and lowspeed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
*High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -2A)
*Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA)
*Minimum Lot-to-Lot variations fo.
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