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2SB1411 PNP Transistor

2SB1411 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A). Low Collector S.

2SB1411 Applications

* High power switching applications.
* Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Conti

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Datasheet Details

Part number
2SB1411
Manufacturer
INCHANGE
File Size
209.27 KB
Datasheet
2SB1411-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1411-like datasheet