2SB1411
2SB1411 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
- High DC Current Gain-
: h FE= 1500(Min)@ (VCE= -3V, IC= -1A)
- Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2m A)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High power switching applications.
- Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
-2
Collector Current-Peak
-3
Base Current-Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃
Junction...
