2SB1411 Datasheet

Features and Benefits

Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -2mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -8m.