2SB1185 transistor equivalent, pnp transistor.
*Power amplifier applications.
*Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.)
*Good Linearity of hFE
*Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@ IC= -2A
*Complement to Type 2SD1762
*Minimum Lot-to-Lot variations for robust device
p.
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