2SB1154 transistor equivalent, pnp transistor.
*Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
*Good Linearity of hFE
*Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ IC= -6A
*Complement to Type 2SD1705
*Minimum Lot-to-Lot variations for robust device
pe.
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