2SB1145 transistor equivalent, pnp transistor.
*High current driver applications.
*Power driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME.
*High DC Current Gain-
: hFE= 2000(Min.)@IC= -1.5A
*Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -1.5A
*Good Linearity of hFE
*With TO-220F package
*Minimum Lot-to-Lot variations for robust device
performance and r.
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