2SB1133 transistor equivalent, pnp transistor.
*Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
P.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Complement to Type 2SD1666
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLIC.
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