2SB1087 transistor equivalent, pnp transistor.
*Designed for low frequency power amplifiers and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
*High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, IC= -2A)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for .
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