2SB1009 transistor equivalent, pnp transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*High Collector Current -IC= -2A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -32V(Min)
*Good Linearity of hFE
*Low Saturation Voltage
*Complement to Type 2SD1380
*Minimum Lot-to-Lot variations for robust device
performan.
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