2SB1007 transistor equivalent, pnp transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
*Good Linearity of hFE
*Complement to Type 2SD1378
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for low fre.
Image gallery
TAGS
Download (Size : 208.35KB)