Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -18V(Min)
Good Linearity of hFE
Low Collector Saturation Voltage
Complement to Type 2SC1568
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequency pow
Full PDF Text Transcription for 2SA900 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SA900. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor 2SA900 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·...
View more extracted text
= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -18 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse -2 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
2SA900 Datasheet
