2SA715 transistor equivalent, pnp transistor.
*Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Good Linearity of hFE
*Collector-Emitter Breakdown Voltage-
V(BR)CEO= -35V (Min)
*Complement to Type 2SC1162
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in l.
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