2SA614 transistor equivalent, silicon pnp power transistor.
*Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -55V (Min.)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V (Max.)@ IC= -1A
*Collector Power Dissipation-
: PC= 25W@ TC= 25℃
*Minimum Lot-to-Lot variations for robust device
p.
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