Datasheet Details
| Part number | 2SA1061 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.88 KB |
| Description | PNP Transistor |
| Datasheet |
 2SA1061 Datasheet
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| Part number | 2SA1061 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.88 KB |
| Description | PNP Transistor |
| Datasheet |
2SA1061 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation ·Complement to Type 2SC2485 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A;
isc Silicon PNP Power Transistor 2SA1061.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1061 | TRANSISTOR | Panasonic Semiconductor |
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2SA1061 | Silicon POwer Transistors | SavantIC |
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