2N6322 transistor equivalent, npn transistor.
*Designed for power amplifier and high-speed switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARA.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
*High Current Capability
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for .
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