| Part number | 2N6280 |
|---|---|
| Datasheet | 2N6280-INCHANGE.pdf |
| File Size | 223.10 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6280 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=50mA IEBO Emitter-Base Cutoff Current VBE=6V ICEO Collector-Emitter Cutoff Current VCE= 70V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ETC | 2N6280 | HIGH-POWER NPN SILICON TRANSISTORS | ETC |
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2N6280 | NPN POWER TRANSISTORS | New Jersey Semi-Conductor |
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2N6280 | NPN Transistor | SSDI |
See all Inchange Semiconductor datasheets
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| 2N6281 | Silicon NPN Power Transistor |
| 2N6282 | NPN Transistor |
| 2N6283 | NPN Transistor |
| 2N6284 | NPN Transistor |
| 2N6286 | PNP Transistor |
| 2N6287 | PNP Transistor |
| 2N6212 | PNP Transistor |
| 2N6216 | NPN Transistor |
| 2N6217 | NPN Transistor |
| 2N6274 | Silicon NPN Power Transistor |
