2N6275 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : VCEO=120V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Vol

INCHANGE

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Datasheet Details

Part number	2N6275
Manufacturer	INCHANGE
File Size	215.35 KB
Description	Silicon NPN Power Transistor
Datasheet	2N6275 Datasheet
Additional preview pages of the 2N6275 datasheet.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=120V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 A 250 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6275 isc website： www.iscsemi.

Published: Mar 12, 2021 |