2N6100
2N6100 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- DC Current Gain
- : h FE = 20-80@ IC= 5A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 70V(Min)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
