2N5989 transistor equivalent, npn transistor.
*Designed for use in general purpose amplifier and
switching circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PAR.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*Low Collector-Emitter Saturation Voltage
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designe.
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