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isc N-Channel MOSFET Transistor
20N20
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤180mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
60
PD
Total Dissipation @TC=25℃
125
Tj
Max.
20N20 Datasheet
