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® ISO 9001 Registered
Process C1004
CMOS 1.0µ m 5 Volt Digital
Electrical Characteristics
N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.55 74 0.60 7 10 Typical 0.75 0.60 87 0.75 0.8
T=25oC Unless otherwise noted Maximum Unit Comments 0.95 V 100x1.0µm V1/2 100x1.0µm 100 µA/V2 100x100µm 0.90 µm 100x1.0µm µm Per side V V
P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P)
Minimum –0.85 24 0.83 –7 –10
Typical –1.0 0.4 28 0.98 0.85
Maximum –1.15 32 1.
C1004 Datasheet
