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IMP Inc

C1004 Datasheet Preview

C1004 Datasheet

Process C1004

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®
ISO 9001 Registered
Process C1004
CMOS 1.0µm
5 Volt Digital
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Electrical Characteristics
Symbol
VTN
γN
βN
LeffN
WN
BVDSSN
VTFP(N)
Minimum
0.55
74
0.60
7
10
Typical
0.75
0.60
87
0.75
0.8
T=25oC Unless otherwise noted
Maximum
0.95
100
0.90
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x1.0µm
100x1.0µm
100x100µm
100x1.0µm
Per side
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γP
βP
LeffP
WP
BVDSSP
VTFP(P)
Minimum
–0.85
24
0.83
–7
–10
Typical
–1.0
0.4
28
0.98
0.85
Maximum
–1.15
32
1.13
Unit
V
V1/2
µA/V2
µm
µm
V
V
Comments
100x1.0µm
100x1.0µm
100x100µm
100x1.0µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
Symbol
ρN-well(f)
ρN+
xjN+
ρP+
xjP+
TGOX
TFIELD
ρPOLY
ρM1
ρM2
TPASS
Minimum
0.8
20
60
15
Typical
1.0
35
0.45
80
0.5
20
700
22
50
30
200+900
Maximum
1.22
50
100
30
Unit
K/
/
µm
/
µm
nm
nm
/
m/
m/
nm
Comments
n-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to SIlicon
Metal-2 to Metal-1
Symbol
Cox
CM1P
CMIS
CMM
Minimum
1.52
Typical
1.64
0.046
0.028
0.038
Maximum
1.82
Unit
fF/µm2
fF/µm2
fF/µm2
fF/µm2
Comments
© IMP, Inc.
17




IMP Inc

C1004 Datasheet Preview

C1004 Datasheet

Process C1004

No Preview Available !

Process C1004
Physical Characteristics
Starting Material
Starting Mat. Resistivity
Typ. Operating Voltage
Well Type
Metal Layers
Poly Layers
Contact Size
Via Size
Metal-1 Width/Space
Metal-2 Width/Space
Gate Poly Width/Space
P <100>
7-8.5 -cm
5V
N-well
2
1
1.2x1.2µm
1.2x1.2µm
1.4 / 1.2µm
2.0 / 1.4µm
1.0 / 1.4µm
N+/P+ Width/Space
N+ To P+ Space
Contact To Poly Space
Contact Overlap Of Diffusion
Contact Overlap Of Poly
Metal-1 Overlap Of Contact
Metal-1 Overlap Of Via
Metal-2 Overlap Of Via
Minimum Pad Opening
Minimum Pad-to-Pad Spacing
Minimum Pad Pitch
2.0 / 1.2µm
7.0µm
0.8µm
0.7µm
0.7µm
0.7µm
0.7µm
0.7µm
65x65µm
5.0µm
80.0µm
Metal 2
n+ p+
Metal 1
p+
N-well
n+
p
p+ substrate
pepi
SIO2
LTO
n+
p+
LTO
Field Oxide
p
ID vs VD, W/L = 20/1.2
VGS = 5.0V
35.0
28.0 VGS = 4.0V
21.0
VGS = 3.0V
14.0
7.0
VGS = 2.0V
VGS = 1.0V
0
0
1.0 2.0
3.0 4.0
5.0
Drain Voltage (V) VDS
N-ch Transistor IV Characteristics of a 20/1.2 device
18 C1004-4-98
–15.0
–12.0
–9.0
ID vs VD, W/L = 20/1.2
VGS = –5.0V
VGS = –4.0V
–6.0 VGS = –3.0V
–3.0
VGS = –2.0V
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
Drain Voltage (V) VDS
P-ch Transistor IV Characteristics of a 20/1.2 device


Part Number C1004
Description Process C1004
Maker IMP Inc
Total Page 2 Pages
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