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C1226 Datasheet Preview

C1226 Datasheet

CMOS

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®
ISO 9001 Registered
Process C1226
CMOS 1.2µm
100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted
Symbol
N-Channel High Voltage Transistor
Threshold Voltage
HVTN
Punch Through Voltage
HVBVDSSN
ON Resistance
HVPR0N
Operating Voltage
N-Channel Low Voltage Transistor
Threshold Voltage
VTN
Body Factor
γN
Conduction Factor
βN
Effective Channel Length
LeffN
Width Encroachment
WN
Punch Through Voltage
BVDSSN
Poly Field Threshold Voltage VTFPN
Minimum
0.70
120
550
0.30
64
5
8
Typical
0.90
700
VGS = 5V
VDS = 100V
0.45
0.475
78
1.35
0.4
12
15
Maximum
1.10
850
0.65
92
Unit Comments
V
V
W/L = 147/5
V
V1/2
µA/V2
µm
µm
V
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
Symbol
P-Channel High Voltage Transistor
Threshold Voltage
HVTP
Punch Through Voltage
HVBVDSSP
ON Resistance
HVPR0N
Operating Voltage
P-Channel Low Voltage Transistor
Threshold Voltage
VTP
Body Factor
γP
Conduction Factor
βP
Effective Channel Length
LeffP
Width Encroachment
WP
Punch Through Voltage
BVDSSP
Poly Field Threshold Voltage VTFP(P)
Minimum
– 0.70
– 120
2000
-0.65
20
–5
–8
Typical
– 0.90
2500
VGS = 5V
VDS = 100V
– 0.45
0.6
25
1.5
0.4
–12
–12
Maximum
– 1.10
3000
– 0.30
30
Unit Comments
V
V
W/L = 139/5
V
V
V1/2
µA/V2
µm
µm
V
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
© 2001 IMP, Inc.
69




IMP

C1226 Datasheet Preview

C1226 Datasheet

CMOS

No Preview Available !

Process C1226
Physical Characteristics
Diffusion & Thin Films
Symbol
Starting Material p<100>
Well (field) Sheet Resistance ρN-well(f)
N+ Sheet Resistance
ρN+
N+ Junction Depth
P+ Sheet Resistance
xjN+
ρP+
P+ Junction Depth
xjP+
High-Voltage Gate Oxide Th HTGOX
Gate Oxide Thickness
TGOX
Interpoly Oxide
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
IPOX
ρPOLY1
ρM1
ρM2
Passivation Thickness
TPASS
High Voltage Section Rules
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
Metal-1 Width/Space
Metal-2 Width/Space
Minimum Typical Maximum Unit
1.0
20
60
33.6
1.7
35
0.3
110
0.3
24
24
42.0
30.0
45
29
200+900
Layout Rules
2.4
50
150
50.4
K/
/
µm
/
µm
nm
nm
nm
/
m/
m/
nm
4.0µm
2.0µm
1.5/2.0µm
3.0/2.0µm
1.5/1.5µm
1.5/1.5µm
2.5/1.5µm
2.5/1.5µm
Diffusion Overlap of Contact
Poly Overlap of Contact
Contact to Poly Space
Metal-1 Overlap of Contact
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
Comments
n-well
oxide+nit.
1.0µm
1.0µm
1.5µm
1.0µm
65x65µm
5.0µm
80µm
70 C1226-11-01


Part Number C1226
Description CMOS
Maker IMP
PDF Download

C1226 Datasheet PDF






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