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F6102 - Ka-Band SATCOM Receiver

Description

The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications.

The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements.

Features

  • 17.5GHz to 21.5GHz operation.
  • 8 radiation channels.
  • 6-bit phase control.
  • 20ns typical gain settling time.
  • 20ns typical phase settling time.
  • 3° typical RMS phase error.
  • 0.3dB typical RMS gain error.
  • 30dB gain attenuation range.
  • 5-bit IC address.
  • Integrated proportional-to-absolute temperature (PTAT) sensor with external biasing.
  • -40°C to +95°C internal temperature sensor.
  • Programmable 4-state on-chip memory.
  • Supply voltage: +2.1V t.

📥 Download Datasheet

Datasheet Details

Part number F6102
Manufacturer IDT
File Size 155.94 KB
Description Ka-Band SATCOM Receiver
Datasheet download datasheet F6102 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ka-Band SATCOM Receiver IC 17.5GHz to 21.5GHz F6102 Advance Short-Form Datasheet Description The F6102 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM phased array applications. The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 16dB nominal electric gain and -30dBm IP1dB. The core chip achieves an RMS phase error of 3° and RMS gain error of 0.3dB over the frequency of operation. The typical total power consumption is 0.32W (40mW per channel).
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