HY628400 sram equivalent, 512k x 8bit cmos sram.
* Fully static operation and Tri-state outputs
* TTL compatible inputs and outputs
* Low power consumption
* Battery backup(L/LL-part)
- 2.0V(min) data re.
This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V..
The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is.
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