HY5DU121622DTP Datasheet, Hynix Semiconductor

*
* VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR4.

which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations r.

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan 2007 1 www.DataSheet.in 1Preliminary HY5DU12822DTP HY5DU121622DTP Revisio.

HY5DU121622DF

HY5DU121622DFP

HY5DU121622DLTP

HY5DU121622ALT

HY5DU121622AT

HY5DU121622B

HY5DU121622C

HY5DU121622CTP

HY5DU12422ALT

HY5DU12422AT

HY5DU12422B

HY5DU12422C

HY5DU12822ALT