HY57V64420HG Datasheet PDF (4 Banks x 4M x 4Bit Synchronous DRAM)

General Description

The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V64420HG is organized as 4banks of 4,194,304x4.

Key Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1, 2, 4 o.

Datasheet Details

Part number	HY57V64420HG
Manufacturer	SK Hynix
File Size	170.38 KB
Description	4 Banks x 4M x 4Bit Synchronous DRAM
Datasheet	HY57V64420HG Datasheet

Part number

HY57V64420HG

Manufacturer

SK Hynix

File Size

170.38 KB

Description

4 Banks x 4M x 4Bit Synchronous DRAM

Datasheet

HY57V64420HG Datasheet

Other Datasheets by SK Hynix

Part Number	Description
HY57V641620ET	4-Bank x 1M x 16-Bits SDRAM
HY57V641620HG	4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG-I	4 Banks x 1M x 16Bit Synchronous DRAM
HY57V643220C	4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220D	4 Bank x 512K x 32-Bit SDRAM
HY57V648010	8Mx8 bit Synchronous DRAM Series
HY57V648011	8Mx8 bit Synchronous DRAM Series
HY57V648020	8Mx8 bit Synchronous DRAM Series
HY57V648021	8Mx8 bit Synchronous DRAM Series
HY57V64820HG	4 Banks x 2M x 8Bit Synchronous DRAM

Part Number

Description

HY57V641620ET

4-Bank x 1M x 16-Bits SDRAM

HY57V641620HG

4 Banks x 1M x 16Bit Synchronous DRAM

HY57V641620HG-I

4 Banks x 1M x 16Bit Synchronous DRAM

HY57V643220C

4 Banks x 512K x 32Bit Synchronous DRAM

HY57V643220D

4 Bank x 512K x 32-Bit SDRAM

HY57V648010

8Mx8 bit Synchronous DRAM Series

HY57V648011

8Mx8 bit Synchronous DRAM Series

HY57V648020

8Mx8 bit Synchronous DRAM Series

HY57V648021

8Mx8 bit Synchronous DRAM Series

HY57V64820HG

4 Banks x 2M x 8Bit Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HG is organized as 4banks of 4,194,304x4. HY57V644020HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.