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HY57V561620FT-5 - 256M (16M x 16bit) Hynix SDRAM Memory

Download the HY57V561620FT-5 datasheet PDF. This datasheet also covers the HY57V561620FT-6 variant, as both devices belong to the same 256m (16m x 16bit) hynix sdram memory family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

use of circuits described.

No patent licenses are implied.

Features

  • Standard SDRAM Protocol.
  • Internal 4bank operation.
  • Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V.
  • All device pins are compatible with LVTTL interface.
  • Low Voltage interface to reduce I/O power.
  • 8,192 Refresh cycles / 64ms.
  • Programmable CAS latency of 2 or 3.
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst.
  • 0oC ~ 70oC Operation.
  • Package Type : 54_Pin TSOPII (Lead Free,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY57V561620FT-6-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by SK Hynix

Part Number Description
HY57V561620FT-6 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FT-H 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FTP-5 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FTP-6 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FTP-H 256M (16M x 16bit) Hynix SDRAM Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Dec. 2009 1 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Document Title 256Mbit (16M x16) Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 History Initial Draft Define : Current value (Page 11 ~ 12) 1. Cerrect : 1-1. 4Banks x 2Mbits x32 --> 4Banks x 4Mbits x16(Ordering information; Page 06). 1-2. VDDQ / VSSQ : Power supply for output buffers (Page 08). 2.
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