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HY57V561620BLT-I - 4 Banks x 4M x 16Bit Synchronous DRAM

Download the HY57V561620BLT-I datasheet PDF. This datasheet also covers the HY57V561620BT-I variant, as both devices belong to the same 4 banks x 4m x 16bit synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V561620B is organized as 4banks of 4,194,304x16.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY57V561620BT-I-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by SK Hynix

Part Number Description
HY57V561620BT-I 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CLT 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CT 4 Banks x 4M x 16Bit Synchronous DRAM
HY57V561620CTP 4 Banks x 4M x 16Bit Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY57V561620B(L)T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B-I is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
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