H5TQ4G83AMR-xxC datasheet, sdram equivalent, Hynix Semiconductor

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Features and benefits

and Ordering Information FEATURES
* VDD=VDDQ=1.5V +/- 0.075V
* Fully differential clock inputs (CK, CK) operation
* Differential Data Strobe (DQS, DQS)
* .

Application

which requires large memory density and high bandwidth. Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referen.

Description

The H5TQ4G43AMR-xxC, H5TQ4G83AMR-xxC are a 4,294,967,29-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 4Gb DDR3 SDRAMs offer fully s.

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