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H55S5132EFR-A3M Datasheet 512Mbit (16Mx32bit) Mobile SDR Memory

Manufacturer: SK Hynix

Overview: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general.

Download the H55S5132EFR-A3M datasheet PDF. This datasheet also includes the H55S5122EFR variant, as both parts are published together in a single manufacturer document.

General Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK).

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