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GM72V66841ET - 2M x 8-Bit x 4 Bank SDRAM

Download the GM72V66841ET datasheet PDF. This datasheet also covers the GM72V66841Exx variant, as both devices belong to the same 2m x 8-bit x 4 bank sdram family and are provided as variant models within a single manufacturer datasheet.

Description

The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock.

Features

  • PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2).
  • 3.3V single Power supply.
  • LVTTL interface.
  • Max Clock frequency 143/133/125/100MHz.
  • 4,096 refresh cycle per 64 ms.
  • Two kinds of refresh operation Auto refresh / Self refresh.
  • Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP.
  • Programmable CAS latency : 2/3.
  • 4 Banks can operate independently or simultaneously.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GM72V66841Exx_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency up to 143 Mhz. Features * PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2) * 3.
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