*
*
*
*
*
*
* VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible w.

which requires large memory density and high bandwidth. This Hynix 256Mb DDR SDRAMs offer fully synchronous operations r.

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 /June. 2006 1 www.DataSheet4U.com HY5DU56822E(L)TP HY5DU561622E(L)TP 1 Revisio.

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561-0104-XXX

561-0875KOP

561-0901-XXX

561-1093KOP

561-1101-XXX

561-1201-XXX

561-1301-XXX

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