H27U8G8T2B memory equivalent, 8 gbit (1024 m x 8 bit) nand flash memory.
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code - 2nd cycle : Devi.
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code - 2nd cycle : Device Code - 3rd cycle : Internal chip number, Cell.
and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.0 / Jul. 2008 1
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