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HGB042N10A , HGP042N10A
P-1
100V N-Ch Power MOSFET
Feature ◇ Optimized for high speed smooth switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application
◇ DC-DC Conversion
◇ Hard Switching and High Speed Circuit
◇ Power Tools ◇ UPS
TO-263
◇ SSR
VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited)
100 V 3.4 mΩ 3.