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HGB029N06SL , HGP029N06SL
P-1
60V N-Ch Power MOSFET
Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application
VDS
RDS(on),typ RDS(on),typ
TO-263 VGS=10V VGS=4.5V
RDS(on),typ RDS(on),typ
TO-220 VGS=10V VGS=4.5V
ID (Sillicon Limited)
ID (Package Limited)
60 1.8 2.7 2.1 3.