IRFU214BA3HD mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 8.0nC)
l Low Reverse transfer capacitances(Typical: 8pF)
l 100% Single Pulse avalanche e.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
IRFU214B A3HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various p.
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