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CS90N03B3 - Silicon N-Channel Power MOSFET

General Description

switching performance and enhance the avalanche energy.

Key Features

  • l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS90N03B3
Manufacturer Huajing Microelectronics
File Size 725.62 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS90N03B3 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET CS90N03 B3 ○R General Description： CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 25 90 80 4.8 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test Applications： Automotive,DC Motor Control and Class D Amplifier.