CS840FA9D mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:10.4pF) l 100% Single Pulse avalanche energy.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
.
CS840F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
500 7 35
0.68
performance and enhance the avalanche energy. .
Image gallery
TAGS
Download (Size : 521.09KB)