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Silicon N-Channel Power MOSFET
CS840 A8D
○R
General Description：
CS840 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD(TC=25℃) RDS(ON)Typ
500 7
100 0.68
switching performance and enhance the avalanche
energy. The transistor can be used in various power
switching circuit for system miniaturization and higher
efficiency. The package form is TO-220AB, which accords
with the RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:10.4pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS840A8D Datasheet
