CS840A8D mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:10.4pF) l 100% Single Pulse avalanche ene.
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
.
CS840 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD(TC=25℃) RDS(ON)Typ
500 7
100 0.68
switching performance and enhance the avalanche
energy..
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