CS7N65FA9D mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy T.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
.
CS7N65F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 7 40
0.98
performance and enhance the avalanche energy..
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