l Fast Switching l Low ON Resistance(Rdson≤0.50Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:21pF) l 100% Single Pulse avalanche e.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating .

CS740F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 400 10 45 0.36 performance and enhance the avalanche energy.

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