CS6N90A8H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤2.3Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:11pF) l 100% Single Pulse avalanche e.
ATX Power、LED Power.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 I.
CS6N90 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various powe.
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