logo

CS6N60FA9TY Datasheet, Huajing Microelectronics

CS6N60FA9TY mosfet equivalent, silicon n-channel power mosfet.

CS6N60FA9TY Avg. rating / M : 1.0 rating-11

datasheet Download

CS6N60FA9TY Datasheet

Features and benefits

l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche.

Application

Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID .

Description

CS6N60F A9TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

Image gallery

CS6N60FA9TY Page 1 CS6N60FA9TY Page 2 CS6N60FA9TY Page 3

TAGS

CS6N60FA9TY
Silicon
N-Channel
Power
MOSFET
CS6N60FA9H
CS6N60FA9H-G
CS6N60F
Huajing Microelectronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts