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CS6N60FA9TY Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Microelectronics

Datasheet Details

Part number CS6N60FA9TY
Manufacturer Huajing Microelectronics
File Size 413.45 KB
Description Silicon N-Channel Power MOSFET
Download CS6N60FA9TY Download (PDF)

General Description

: CS6N60F A9TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-220F, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET CS6N60F A9TY ○R General.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test.