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CS6N60FA9TY Datasheet

Manufacturer: Huajing Microelectronics
CS6N60FA9TY datasheet preview

CS6N60FA9TY Details

Part number CS6N60FA9TY
Datasheet CS6N60FA9TY-HuajingMicroelectronics.pdf
File Size 413.45 KB
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
CS6N60FA9TY page 2 CS6N60FA9TY page 3

CS6N60FA9TY Overview

: CS6N60F A9TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.

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