CS6N60FA9TY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS6N60FA9TY Datasheet Preview — Preview of CS6N60FA9TY PDF

Datasheet Details

Part number	CS6N60FA9TY
Manufacturer	Huajing Microelectronics
File Size	413.45 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N60FA9TY-HuajingMicroelectronics.pdf

CS6N60FA9TY Product details

Description

CS6N60F A9TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |