CS640FA9H
Description
：
CS640F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is
TO-220F, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24n C) l Low Reverse transfer capacitances(Typical:25p F) l 100% Single Pulse avalanche energy Test
Applications：
CRT、TV/Monitor and Lighting.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche...
